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| MRF1090MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. PACKAGE STYLE .280 4L PILL (A) A .100x45 FEATURES: * Internal Input Matching Network * PG = 8.4 dB at 90 W/1150 MHz * OmnigoldTM Metalization System C B OG D MAXIMUM RATINGS IC VCB PDISS TJ TSTG JC 1.0 A PEAK 55 V 292 W @ 25 C -65 C to +200 C -65 C to +150 C 0.6 C/W DIM A B C D E F G .275 / 6.99 MINIMUM inches / mm inches / mm E F MAXIMUM .105 / 2.67 .205 / 5.21 .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 .007 / 0.18 .065 / 1.65 .145 / 3.68 .285 / 7.21 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE COB PG C IC = 10 mA IC = 25 mA IE = 1.0 mA VCB = 50 V VCE = 5.0 V VCE = 50 V VCC = 50 V PIN = 13 W TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 65 65 3.5 100 UNITS V V V mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 90 W f = 1025 - 1150 MHz 10 200 40 8.4 38 Pulse with = 10 S, Duty Cycle = 1.0 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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